#BSM25GD120DN2E3224 EUPEC BSM25GD120DN2E3224 New IGBT Modules N-CH 1.2KV 35A , BSM25GD120DN2E3224 pictures, BSM25GD120DN2E3224 price, #BSM25GD120DN2E3224 supplier
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Email: [email protected]
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Email: [email protected]
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BSM25GD120DN2E3224
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Hex
Collector– Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 35 A
Gate-Emitter Leakage Current: 180 nA
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 2
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 200 W
Factory Pack Quantity: 10
IGBT Modules N-CH 1.2KV 35A